| PART |
Description |
Maker |
| X2114TTT X2111TTT X2112PTT X2118PFD X2118PET X2111 |
Analog IC
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3709Z with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7403 with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ44EPBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3518 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; A IRFP1405 with Standard Packaging 模拟IC
|
NXP Semiconductors N.V.
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| PSX96B-133PQ160 PSX160-PQ240 PSX160-50MQ240 PSX96B |
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9540NL with Lead-Free Packaging
User Programmable Special Function ASIC
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR9120N with Standard Packaging
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR9120N with Lead Free Packaging 用户可编程ASIC的特殊功
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7420 with Lead Free Packaging 用户可编程ASIC的特殊功
-150V Single P-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU6215 with Lead Free Packaging 用户可编程ASIC的特殊功
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7410 with Lead-Free Packaging. 用户可编程ASIC的特殊功
|
Ironwood Electronics
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管（之HEXFET晶体管）
REPETITIVE AVALANCHE RATED AND dv/dt RATED
HEXFET? TRANSISTOR
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRLBA1304P IRLBA1304 |
HEXFET? Power MOSFET
40V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
|
International Rectifier
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 54A条（丁）|52AA
SMPS MOSFET
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF3711ZL IRF3711ZS IRF3711Z |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
